Boron-containing molecular sieve CHA

ABSTRACT

A boron-containing molecular sieve having the CHA crystal structure and comprising (1) silicon oxide and (2) boron oxide or a combination of boron oxide and aluminum oxide, iron oxide, titanium oxide, gallium oxide and mixtures thereof; and wherein the mole ratio of silicon oxide to boron oxide in said boron-containing molecular sieve is between 15 and 125. Also, a boron-containing molecular sieve, having a CHA crystal structure containing oxides only of (1) silicon and (2) boron; and wherein the mole ratio of silicon oxide to boron oxide in said boron-containing molecular sieve is between 15 and 125.

This application is a Continuation-in-Part of application Ser. No. 11/688,719 filed on Mar. 20, 2007, now abandoned, which claims priority to application Ser. No. 11/266,075 filed Nov. 2, 2005, and issued on Jun. 5, 2007 as U.S. Pat. No. 7,226,575, which claims priority under 35 USC 119 to Provisional Application No. 60/632,022, filed on Nov. 30, 2004.

BACKGROUND

Chabazite, which has the crystal structure designated “CHA”, is a natural zeolite with the approximate formula Ca₆Al₁₂Si₂₄O₇₂. Synthetic forms of chabazite are described in “Zeolite Molecular Sieves” by D. W. Breck, published in 1973 by John Wiley & Sons. The synthetic forms reported by Breck are: zeolite “K-G”, described in J. Chem. Soc., p. 2822 (1956), Barrer et al.; zeolite D, described in British Patent No. 868,846 (1961); and zeolite R, described in U.S. Pat. No. 3,030,181, issued Apr. 17, 1962 to Milton et al. Chabazite is also discussed in “Atlas of Zeolite Structure Types” (1978) by W. H. Meier and D. H. Olson.

The K-G zeolite material reported in the J. Chem. Soc. Article by Barrer et al. is a potassium form having a silica:alumina mole ratio (referred to herein as “SAR”) of 2.3:1 to 4.15:1. Zeolite D reported in British Patent No. 868,846 is a sodium-potassium form having a SAR of 4.5:1- to 4.9:1. Zeolite R reported in U.S. Pat. No. 3,030,181 is a sodium form which has a SAR of 3.45:1 to 3.65:1.

Citation No. 93:66052y in Volume 93 (1980) of Chemical Abstracts concerns a Russian language article by Tsitsishrili et al. in Soobsch. Akad. Nauk. Gruz. SSR 1980, 97(3) 621-4. This article teaches that the presence of tetramethylammonium ions in a reaction mixture containing K₂O—Na₂O—SiO₂—Al₂O₃—H₂O promotes the crystallization of chabazite. The zeolite obtained by the crystallization procedure has a SAR of 4.23.

The molecular sieve designated SSZ-13, which has the CHA crystal structure, is disclosed in U.S. Pat. No. 4,544,538 issued Oct. 1, 1985 to Zones. SSZ-13 is prepared from nitrogen-containing cations derived from 1-adamantamine, 3-quinuclidinol and 2-exo-aminonorbornane. Zones discloses that the SSZ-13 of U.S. Pat. No. 4,544,538 has a composition, as-synthesized and in the anhydrous state, in terms of mole ratios of oxides as follows: (0.5 to 1.4)R₂O:(0 to 0.5)M₂O:W₂O₃:(greater than 5)YO₂ wherein M is an alkali metal cation, W is selected from aluminum, gallium and mixtures thereof, Y is selected from silicon, germanium and mixtures thereof, and R is an organic cation. U.S. Pat. No. 4,544,538 does not, however, disclose boron-containing SSZ-13.

U.S. Pat. No. 6,709,644, issued Mar. 23, 2004 to Zones et al., discloses zeolites having the CHA crystal structure and having small crystallite sizes. It does not, however, disclose a CHA zeolite containing boron. It is disclosed that the zeolite can be used for separation of gasses (e.g., separating carbon dioxide from natural gas), and in catalysts used for the reduction of oxides of nitrogen in a gas stream (e.g., automotive exhaust), converting lower alcohols and other oxygenated hydrocarbons to liquid products, and for producing dimethylamine.

U.S. Patent Publication US 2003/0176751A1 discloses zeolites having the CHA crystal structure with a silica/alumina molar ratio below and above 265. The reaction mixture with hydrofluoric acid used to produce the zeolite has a low Wt % yield of zeolite based on silica. It also does not produce zeolites having the CHA crystal structure wherein the mole ratio of silicon oxide to boron oxide in the zeolite is between 15 and 125.

SUMMARY OF THE INVENTION

There is provided a boron-containing molecular sieve having the CHA crystal structure and comprising (1) silicon oxide and (2) boron oxide or a combination of boron oxide and aluminum oxide, iron oxide, titanium oxide, gallium oxide and mixtures thereof; and wherein the mole ratio of silicon oxide to boron oxide in said boron-containing molecular sieve is between 15 and 125.

There is also provided a boron-containing molecular sieve, having a CHA crystal structure containing oxides only of (1) silicon and (2) boron; and wherein the mole ratio of silicon oxide to boron oxide in said boron-containing molecular sieve is between 15 and 125.

DETAILED DESCRIPTION

The present invention relates to molecular sieves having the CHA crystal structure and containing boron in their crystal framework.

Boron-containing CHA molecular sieves can be suitably prepared from an aqueous reaction mixture containing sources of sources of an oxide of silicon, germanium or mixtures thereof; sources of boron oxide or a combination of boron oxide and aluminum oxide, iron oxide, titanium oxide, gallium oxide and mixtures thereof; optionally sources of an alkali metal or alkaline earth metal oxide; and a cation derived from 1-adamantamine, 3-quinuclidinol or 2-exo-aminonorbornane. The mixture should have a composition in terms of mole ratios falling within the ranges shown in Table A below:

TABLE A YO₂/W_(a)O_(b)  >2-2,000 OH—/YO₂ 0.2-0.45 Q/YO₂ 0.2-0.45 M_(2/n)O/YO₂   0-0.25 H₂O/YO₂  22-80 wherein Y is silicon, germanium or mixtures thereof; W is boron or a combination of boron and aluminum, iron, titanium, gallium and mixtures thereof; M is an alkali metal or alkaline earth metal; n is the valence of M (i.e., 1 or 2) and Q is a quaternary ammonium cation derived from 1-adamantamine, 3-quinuclidinol or 2-exo-aminonorbornane (commonly known as a structure directing agent or “SDA”).

The quaternary ammonium cation derived from 1-adamantamine can be a N,N,N-trialkyl-1-adamantammonium cation which has the formula:

where R¹, R², and R³ are each independently a lower alkyl, for example methyl. The cation is associated with an anion, A⁻, which is not detrimental to the formation of the molecular sieve. Representative of such anions include halogens, such as fluoride, chloride, bromide and iodide; hydroxide; acetate; sulfate and carboxylate. Hydroxide is the preferred anion. It may be beneficial to ion exchange, for example, a halide for hydroxide ion, thereby reducing or eliminating the alkali metal or alkaline earth-metal hydroxide required.

The quaternary ammonium cation derived from 3-quinuclidinol can have the formula:

where R¹ and A are as defined above.

The quaternary ammonium cation derived from 2-exo-aminonorbornane can have the formula:

where R¹, R², R³ and A are as defined above.

The reaction mixture is prepared using standard molecular sieve preparation techniques. Typical sources of silicon oxide include fumed silica, silicates, silica hydrogel, silicic acid, colloidal silica, tetra-alkyl orthosilicates, and silica hydroxides. Sources of boron oxide include borosilicate glasses and other reactive boron compounds. These include borates, boric acid and borate esters. Typical sources of aluminum oxide include aluminates, alumina, hydrated aluminum hydroxides, and aluminum compounds such as AlCl₃ and Al₂(SO₄)₃. Sources of other oxides are analogous to those for silicon oxide, boron oxide and aluminum oxide.

It has been found that seeding the reaction mixture with CHA crystals both directs and accelerates the crystallization, as well as minimizing the formation of undesired contaminants. In order to produce pure phase boron-containing CHA crystals, seeding may be required. When seeds are used, they can be used in an amount that is about 2-3 weight percent based on the weight of YO₂.

The reaction mixture is maintained at an elevated temperature until CHA crystals are formed. The temperatures during the hydrothermal crystallization step are typically maintained from about 120° C. to about 160° C. It has been found that a temperature below 160° C., e.g., about 120° C. to about 140° C., is useful for producing boron-containing CHA crystals without the formation of secondary crystal phases.

The crystallization period is typically greater than 1 day and preferably from about 3 days to about 7 days. The hydrothermal crystallization is conducted under pressure and usually in an autoclave so that the reaction mixture is subject to autogenous pressure. The reaction mixture can be stirred, such as by rotating the reaction vessel, during crystallization.

Once the boron-containing CHA crystals have formed, the solid product is separated from the reaction mixture by standard mechanical separation techniques such as filtration. The crystals are water-washed and then dried, e.g., at 90° C. to 150° C. for from 8 to 24 hours, to obtain the as synthesized crystals. The drying step can be performed at atmospheric or subatmospheric pressures.

The boron-containing CHA molecular sieve has a composition, as synthesized and in the anhydrous state, in terms of mole ratios of oxides as indicated in Table B below:

As-Synthesized Boron-containing CHA Composition

TABLE B YO₂/W_(c)O_(d)   20-2,000 M_(2/n)O/YO₂   0-0.03 Q/YO₂ 0.02-0.05 where Y, W, M, n and Q are as defined above.

The boron-containing CHA molecular sieves, as-synthesized, have a crystalline structure whose X-ray powder diffraction (“XRD”) pattern shows the following characteristic lines:

TABLE I As-Synthesized Boron-Containing CHA XRD 2 Theta^((a)) d-spacing (Angstroms) Relative Intensity^((b)) 9.68 9.13 S 14.17 6.25 M 16.41 5.40 VS 17.94 4.94 M 21.13 4.20 VS 25.21 3.53 VS 26.61 3.35 W-M 31.11 2.87 M 31.42 2.84 M 31.59 2.83 M ^((a))±0.10 ^((b))The X-ray patterns provided are based on a relative intensity scale in which the strongest line in the X-ray pattern is assigned a value of 100: W(weak) is less than 20; M(medium) is between 20 and 40; S(strong) is between 40 and 60; VS(very strong) is greater than 60.

Table IA below shows the X-ray powder diffraction lines for as-synthesized boron-containing CHA including actual relative intensities.

TABLE IA As-Synthesized Boron-Containing CHA XRD 2 Theta^((a)) d-spacing (Angstroms) Relative Intensity (%) 9.68 9.13 55.2 13.21 6.70 5.4 14.17 6.25 33.5 16.41 5.40 81.3 17.94 4.94 32.6 19.43 4.56 6.8 21.13 4.20 100 22.35 3.97 15.8 23.00 3.86 10.1 23.57 3.77 5.1 25.21 3.53 78.4 26.61 3.35 20.2 28.37 3.14 6.0 28.57 3.12 4.4 30.27 2.95 3.9 31.11 2.87 29.8 31.42 2.84 38.3 31.59 2.83 26.5 32.27 2.77 1.4 33.15 2.70 3.0 33.93 2.64 4.7 35.44 2.53 3.9 35.84 2.50 1.2 36.55 2.46 10.9 39.40 2.29 1.8 40.02 2.25 1.3 40.44 2.23 1.0 40.73 2.21 6.0 ^((a))±0.10

After calcination, the boron-containing CHA molecular sieves have a crystalline structure whose X-ray powder diffraction pattern include the characteristic lines shown in Table II:

TABLE II Calcined Boron-Containing CHA XRD 2 Theta^((a)) d-spacing (Angstroms) Relative Intensity 9.74 9.07 VS 13.12 6.74 M 14.47 6.12 W 16.38 5.41 W 18.85 4.78 M 21.07 4.21 M 25.98 3.43 W 26.46 3.37 W 31.30 2.86 W 32.15 2.78 W ^((a))±0.10

Table IIA below shows the X-ray powder diffraction lines for calcined boron-containing CHA including actual relative intensities.

TABLE IIA Calcined Boron-Containing CHA XRD 2 Theta^((a)) d-spacing (Angstroms) Relative Intensity (%) 9.74 9.07 100 13.12 6.74 29.5 14.47 6.12 4.6 16.38 5.41 14.2 18.85 4.78 22.1 19.60 4.53 2.2 21.07 4.21 32.9 22.84 3.89 2.2 23.68 3.75 0.8 9.74 9.07 100 13.12 6.74 29.5 14.47 6.12 4.6 16.38 5.41 14.2 18.85 4.78 22.1 19.60 4.53 2.2 21.07 4.21 32.9 22.84 3.89 2.2 25.98 3.43 13.1 26.46 3.37 8.7 28.27 3.15 1.3 29.24 3.05 1.6 30.32 2.95 1.7 31.30 2.86 14.4 32.15 2.78 9.0 32.56 2.75 0.2 35.26 2.54 2.4 ^((a))±0.10

The X-ray powder diffraction patterns were determined by standard techniques. The radiation was the K-alpha/doublet of copper and a scintillation counter spectrometer with a strip-chart pen recorder was used. The peak heights I and the positions, as a function of 2 Theta where Theta is the Bragg angle, were read from the spectrometer chart. From these measured values, the relative intensities, 100×I/Io, where lo is the intensity of the strongest line or peak, and d, the interplanar spacing in Angstroms corresponding to the recorded lines, can be calculated.

Variations in the diffraction pattern can result from variations in the mole ratio of oxides from sample to sample. The molecular sieve produced by exchanging the metal or other cations present in the molecular sieve with various other cations yields a similar diffraction pattern, although there can be shifts in interplanar spacing as well as variations in relative intensity. Calcination can also cause shifts in the X-ray diffraction pattern. Also, the symmetry can change based on the relative amounts of boron and aluminum in the crystal structure. Notwithstanding these perturbations, the basic crystal lattice structure remains unchanged.

Boron-containing CHA molecular sieves are useful in adsorption, in catalysts useful in converting methanol to olefins, synthesis of amines (such as dimethylamine), in the reduction of oxides of nitrogen in gasses (such as automobile exhaust), and in gas separation.

EXAMPLES Examples 1-17

Boron-containing CHA is synthesized by preparing the gel compositions, i.e., reaction mixtures, having the compositions, in terms of mole ratios, shown in the table below. The resulting gel is placed in a Parr bomb reactor and heated in an oven at the temperature indicated below while rotating at the speed indicated below. Products are analyzed by X-ray diffraction (XRD) and found to be boron-containing molecular sieves having the CHA structure. The source of silicon oxide is Cabosil M-5 fumed silica or HiSil 233 amorphous silica (0.208 wt. % alumina). The source of boron oxide is boric acid and the source of aluminum oxide is Reheis F 2000 alumina.

%1- Ex. # SiO₂/B₂O₃ SiO₂/Al₂O₃ H₂O/SiO₂ OH−/SiO₂ Na+/SiO₂ SDA/SiO₂ Wt. Rx Cond.¹ Seeds ada² 1 2.51 1,010 23.51 0.25 0.20 0.25 1.77 140/43/5 d yes 100 2 12.01 1,010 22.74 0.25 0.08 0.25 1.38 140/43/5 d yes 100 3 12.33 1,010 22.51 0.25 0.08 0.25 1.68 140/43/5 d yes 100 4 12.07 288,900 23.00 0.26 0.09 0.26 0.00 140/43/5 d no 100 5 12.33 37,129 22.51 0.25 0.09 0.25 1.63 140/43/5 d yes 100 6 12.33 248,388 22.51 0.25 0.09 0.25 1.64 140/43/5 d yes 100 7 12.33 248,388 22.53 0.25 0.09 0.25 1.59 140/43/5 d yes 100 8 12.33 248,388 22.53 0.25 0.00 0.25 1.65 140/43/5 d yes 100 9 12.33 248,388 22.51 0.25 0.09 0.25 1.57 160/43/4 d yes 100 10 11.99 288,900 23.18 0.26 0.09 0.26 1.62 160/43/4 d no 100 11 12.13 288,900 32.22 0.43 0.21 0.21 0.85 160/43/4 d no 100 12 11.99 288,900 23.16 0.26 0.00 0.26 0.00 160/43/4 d no 100 13 11.99 288,900 23.16 0.26 0.00 0.26 1.38 160/43/5 d no 100 14 11.99 288,900 23.16 0.26 0.00 0.06 0.00 160/43/3 d yes 100 15 11.99 288,900 23.16 0.26 0.00 0.26 0.00 160/43/3 d yes 100 16 3.08 248,388 22.51 0.25 0.00 0.25 1.87 140/43/6 d yes 100 17 11.99 288,900 23.18 0.26 0.09 0.26 — 160/43/4 d no 100 ¹° C./RPM/Days ²1-ada = Quaternary ammonium cation derived from 1-adamantamine The mole ratios of silicon oxide to boron oxide, and the Wt % yield on a silica basis, measured in some of the Examples of boron-containing CHA molecular sieves are shown below.

Wt % Yield Based on Example # SiO₂/B₂O₃ Silica 6 39 90.5 8 43 91.0 11 45 61.8 17 39 85.5

Examples 18-23 Deboronation

Boron is removed from samples of the molecular sieves prepared as described in Examples 1-17 above. The sample is heated in an acid solution under the conditions indicated in the table below. The results are shown in the table.

Starting Deboronation Rx Ex. No. (B) SSZ-13 18 19 20 21 22 23 Acid used — Acetic acid Acetic acid Acetic acid HCl HCl HCl Acid Molarity — 1.0 M 0.01 M 0.0001 M 0.01 M 0.001 M 0.0001 M Rx Cond. — 45 C./0 rpm/19 hr 45 C./0 rpm/19 hr 45 C./0 rpm/19 hr 45 C./0 rpm/19 hr 45 C./0 rpm/19 hr 45 C./0 rpm/19 hr Analysis Untreated Treated Treated Treated Treated Treated Treated Results Silicon 33.20% 84.18% 80.92% 81.08% 80.49% 81.41% 83.50% Boron  0.66% 614 ppm 513 ppm 420 ppm 421 ppm 506 ppm 552 ppm Aluminum 147 ppm  74 ppm  61 ppm 201 ppm 756 ppm 159 ppm  80 ppm XRD CHA CHA CHA CHA CHA CHA CHA SiO₂/Al₂O₃ 4356 — — — — — —

Comparative Examples 24-26

Aluminum and boron-containing CHA were synthesized according to the process of Example 1 in U.S. Patent Publication US2003/0176751. Comparative Example 24 used the same reaction mixture as in the patent publication, which was a mixture of ROH (R═N,N,N-trimethyladamantammonium) solution, Al(NO₃)₃.9H₂O and tetraethylorthosilicate. Comparative Example 25 replaced an equimolar amount of the aluminum nitrate with boric acid. Comparative Example 26 replaced a double molar amount of the aluminum nitrate with boric acid.

The reactions were conducted in a plastic beaker until the weights of the formed gels were reduced. The gels were ground to a powder with mortar and pestle and placed into a Teflon lined autoclave. Then 1.6 g of 49% aqueous hydrofluoric acid was stirred in.

The mixtures were crystallized in an autoclave heated to 150° C. and tumbled at 43 rpm for 65 hours. X-ray diffraction analyses of the samples at hours showed that all three comparative examples were clean highly crystalline chabazites. After cooling, the mixtures were washed to low conductivity (<80 micromho/cm) to remove extraneous aluminum or boron. Analysis of the products, and calculation of Wt % yield on a silica basis, gave the results as shown below:

Example Si, SiO2/ SiO2/ Wt % No. wt % Al, wt % B, wt % Al2O3 B2O3 Yield 24 35.8 0.54 <25 ppm 128 >11057 20.5 25 35.8 0.0103 0.0768 6703 360 20.7 26 33.8 0.0098 0.1740 6652 150 7.3

None of these comparative examples had a mole ratio of silicon oxide to boron oxide of between 15 and 125; even when a doubling of the molar concentration of boric acid was added to the reaction mixture. The reaction mixture with hydrofluoric acid used to produce the zeolite has a low Wt % yield of zeolite based on silica. The Wt % yields on a silica basis were all below 50 wt %. 

1. A boron-containing molecular sieve having the CHA crystal structure and comprising (1) silicon oxide and (2) boron oxide or a combination of boron oxide and aluminum oxide, iron oxide, titanium oxide, gallium oxide and mixtures thereof; and wherein the mole ratio of silicon oxide to boron oxide in said boron-containing molecular sieve is between 15 and
 125. 2. The molecular sieve of claim 1, wherein oxide (2) is more than 50% boron oxide on a molar basis.
 3. The boron-containing molecular sieve of claim 1, wherein the mole ratio of silicon oxide to boron oxide is between 15 and
 100. 4. The boron-containing molecular sieve of claim 3, wherein the mole ratio of silicon oxide to boron oxide is between 15 and
 50. 5. A boron-containing molecular sieve, having a CHA crystal structure containing oxides only of (1) silicon and (2) boron; and wherein the mole ratio of silicon oxide to boron oxide in said boron-containing molecular sieve is between 15 and
 125. 6. The boron-containing molecular sieve of claim 5, wherein the mole ratio of silicon oxide to boron oxide is between 15 and
 100. 7. The boron-containing molecular sieve of claim 6, wherein the mole ratio of silicon oxide to boron oxide is between 15 and
 50. 